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The future of the RF GaN semiconductor device market looks promising with opportunities in the aerospace & defense, IT & telecom, consumer electronics, automotive industries. The global RF GaN semiconductor device market is expected to grow with a CAGR of 21% to 23% from 2020 to 2025. The major drivers for this market are increase in demand for gallium nitride in automotive and consumer electronics, the success of gallium nitride in RF power electronics, and wide bandgap property of gallium nitride material encouraging innovative applications.

A total of XX figures / charts and XX tables are provided in more than 150 pages report is developed to help in your business decisions. Sample figures with some insights are shown below. To learn the scope, benefits, companies researched, and other details of the global RF GaN semiconductor device market report, please download the report brochure.

 

 


Growth in various segments of the RF GaN semiconductor device market are given below:
  
 

 
The study includes trends and forecast for the global RF GaN semiconductor device market by material, application, end use industry, and region as follows:

By Material [Value ($ Million) shipment analysis for 2014 – 2025]:
  • GaN-On-SiC 
  • GaN-On-Silicon 
  • GaN-On-Diamond 

By Application [Value ($ Million) shipment analysis for 2014 – 2025]:
  • Wireless Infrastructure 
  • Power Storage 
  • Satellite Communication
  • PV Inverter 
  • Otros 

By End Use Industry [Value ($ Million) shipment analysis for 2014 – 2025]: 
  • Aeroespacial y defensa 
  • IT and Telecom 
  • Consumer Electronics 
  • Automotor
  • Otros

By Region [Value ($ Million) shipment analysis for 2014 – 2025]:
  • América del norte
    • Estados Unidos
    • Canadá 
    • México
  • Europa
    • Reino Unido
    • España
    • Alemania
    • Francia
  • Asia Pacífico
    • Porcelana
    • India
    • Japón
    • Corea del Sur
  • The Rest of the World
    • Brasil
 

Some of the RF GaN semiconductor device manufacturers profiled in this report include, Cree, Hitachi, Infineon, Mitsubishi, Panasonic, STMicroelectronics, Sumitomo, and Toshiba.

In this market, GaN-On-SiC, GaN-On-Silicon, GaN-On-Diamond are the major material types used. 

Within this market, wireless infrastructure is expected to witness the highest growth over the forecast period due to increasing technological advancements in 5G infrastructure networks, growing adoption of 4G and 5G mobile devices, and rising implementation of RF GaN solutions in wireless infrastructure applications such as in radio, MRI machines, radar, television broadcasting, and others. 

Asia-Pacific will remain the largest region and it is also expected to witness the highest growth over the forecast period due to the growing market for telecommunication and the electronics industry across the region.



 
Features of the Global RF GaN Semiconductor Device Market
 
  • Market Size Estimates: Global RF GaN semiconductor device market size estimation in terms of value ($M) shipment.
  • Trend and Forecast Analysis: Market trend (2014-2019) and forecast (2020-2025) by various segments and regions.
  • Segmentation Analysis: Global RF GaN semiconductor device market size by various segments, such as material, application, and end use industry in terms of value.
  • Regional Analysis: Global RF GaN semiconductor device market breakdown by the North America, Europe, Asia Pacific, and Rest of the World.
  • Growth Opportunities: Analysis of growth opportunities in different material, application, end useindustry, and region for the global RF GaN semiconductor device market.
  • Strategic Analysis: This includes M&A, new product development, and competitive landscape of the global RF GaN semiconductor device market.
  • Análisis de la intensidad competitiva de la industria basada en el modelo de cinco fuerzas de Porter.




 
This report answers following key questions

  Q.1 What are some of the most promising potential, high-growth opportunities for the global RF GaN semiconductor device market by material (GaN-On-SiC, GaN-On-Silicon, GaN-On-Diamond), application (wireless infrastructure, power storage, satellite communication, PV inverter, and others), end use industry (aerospace and defense, IT and telecom, consumer electronics, automotive, and others), and region (North America, Europe, Asia Pacific, and Rest of the World)?
Q. 2 Which segments will grow at a faster pace and why?
Q.3 Which region will grow at a faster pace and why?
Q.4 What are the key factors affecting market dynamics? What are the drivers and challenges of the market?
Q.5 What are the business risks and threats to the market?
Q.6 What are emerging trends in this market and the reasons behind them?
Q.7 What are some changing demands of customers in the market?
Q.8 What are the new developments in the market? Which companies are leading these developments?
Q.9 Who are the major players in this market? What strategic initiatives are being implemented by key players for business growth?
Q.10 What are some of the competitive products and processes in this market, and how big of a threat do they pose for loss of market share via material or product substitution?
Q.11 What M & A activities did take place in the last five years in this market?

 




Report Scope



Key Features Description
Base Year for Estimation 2019
Trend Period
(Actual Estimates)		 2014-2019
Forecast Period 2020-2025
Páginas More than 150
Market Representation / Units Revenue in US $ Million
Report Coverage Market Trends & Forecasts, Competitor Analysis, New Product Development, Company Expansion, Merger, Acquisitions & Joint Venture, and Company Profiling
Market Segments By Material (Gan-On-Sic, Gan-On-Silicon, Gan-On-Diamond), Application (Wireless Infrastructure, Power Storage, Satellite Communication, PV Inverter, and Others), End Use Industry (Aerospace and Defense, IT and Telecom, Consumer Electronics, Automotive, and Others)

Regional Scope

North America (USA, Mexico, and Canada), Europe (UK, Spain, Germany, and France), Asia (China, India, Japan, and South Korea), and ROW (Brazil)
Customization 10% Customization without Any Additional Cost

Tabla de contenido

 
1. Executive Summary

2. Market Background and Classification
2.1: Introduction, Background, and Classification
2.2: Supply Chain
2.3: Industry Drivers and Challenges

3. Market Trends and Forecast Analysis from 2014 to 2025
3.1: Macroeconomic Trends and Forecast
3.2: Global RF GaN Semiconductor Device Market Trends and Forecast
3.3: Global RF GaN Semiconductor Device Market by Material
3.3.1: GaN-On-SiC
3.3.2: GaN-On-Silicon
3.3.3: GaN-On-Diamond
3.4: Global RF GaN Semiconductor Device Market by Application
3.4.1: Wireless Infrastructure
3.4.2: Power Storage 
3.4.3: Satellite Communication 
3.4.4: PV Inverter
3.4.5: Others
3.5: Global RF GaN Semiconductor Device Market by End Use Industry
3.5.1: Automotive
3.5.2: Consumer Electronics
3.5.3: Aerospace & Defence 
3.5.4: IT and Telecom
3.5.5: Others

4. Market Trends and Forecast Analysis by Region
4.1: Global RF GaN Semiconductor Device Market by Region
4.2: North American RF GaN Semiconductor Device Market
4.2.1: Market by Material: GaN-On-SiC, GaN-On-Silicon, GaN-On-Diamond
4.2.2: Market by Application: Wireless Infrastructure, Power Storage, Satellite Communication, PV Inverter, and Others
4.2.3: Market by End Use Industry: Aerospace and Defense, IT and Telecom, Consumer Electronics, Automotive, and Others
4.2.4: United States RF GaN Semiconductor Device Market
4.2.5: Canadian RF GaN Semiconductor Device Market
4.2.6: Mexican RF GaN Semiconductor Device Market
4.3: European RF GaN Semiconductor Device Market 
4.3.1: Market by Material: GaN-On-SiC, GaN-On-Silicon, GaN-On-Diamond
4.3.2: Market by Application: Wireless Infrastructure, Power Storage, Satellite Communication, PV Inverter, and Others
4.3.3: Market by End Use Industry: Aerospace and Defense, IT and Telecom, Consumer Electronics, Automotive, and Others
4.3.4: Germany RF GaN Semiconductor Device Market
4.3.5: UK RF GaN Semiconductor Device Market
4.3.6: France RF GaN Semiconductor Device Market
4.3.7: Spain RF GaN Semiconductor Device Market
4.4: APAC RF GaN Semiconductor Device Market
4.4.1: Market by Material: GaN-On-SiC, GaN-On-Silicon, GaN-On-Diamond
4.4.2: Market by Application: Wireless Infrastructure, Power Storage, Satellite Communication, PV Inverter, and Others
4.4.3: Market by End Use Industry: Aerospace and Defense, IT and Telecom, Consumer Electronics, Automotive, and Others
4.4.4: China RF GaN Semiconductor Device Market
4.4.5: Japan RF GaN Semiconductor Device Market
4.4.6: South Korea RF GaN Semiconductor Device Market
4.4.7: India RF GaN Semiconductor Device Market
4.5: ROW RF GaN Semiconductor Device Market
4.5.1: Market by Material: GaN-On-SiC, GaN-On-Silicon, GaN-On-Diamond
4.5.2: Market by Application: Wireless Infrastructure, Power Storage, Satellite Communication, PV Inverter, and Others
4.5.3: Market by End Use Industry: Aerospace and Defense, IT and Telecom, Consumer Electronics, Automotive, and Others
4.5.4: Brazil RF GaN Semiconductor Device Market

5. Competitor Analysis
5.1: Product Portfolio Analysis
5.2: Market Share Analysis
5.3: Operational Integration
5.4: Geographical Reach
5.5: Porter’s Five Forces Analysis

6. Growth Opportunities and Strategic Analysis
6.1: Growth Opportunity Analysis
6.1.1: Growth Opportunities for Global RF GaN Semiconductor Device Market by Material
6.1.2: Growth Opportunities for Global RF GaN Semiconductor Device Market by Application
6.1.3: Growth Opportunities for Global RF GaN Semiconductor Device Market by End Use Industry
6.1.4: Growth Opportunities for Global RF GaN Semiconductor Device Market by Region
6.2: Emerging Trends in Global RF GaN Semiconductor Device Market
6.3: Strategic Analysis
6.3.1: New Product Development
6.3.2: Capacity Expansion of Global RF GaN Semiconductor Device Market
6.3.3: Mergers, Acquisitions and Joint Ventures in the Global RF GaN Semiconductor Device Market

7. Company Profiles of Leading Players
7.1: Cree
7.2: Hitachi
7.3: Infineon
7.4: Mitsubishi
7.5: Panasonic
7.6: STMicroelectronics
7.7: Sumitomo
7.8: Toshiba
 
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